SPB80N06S2L-06

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

5050pF @ 25V

Terminal Finish :

MATTE TIN

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain-source On Resistance-Max :

0.0084Ohm

Series :

OptiMOS™

Operating Temperature :

-55°C~175°C TJ

Mount :

Surface Mount

RoHS Status :

Non-RoHS Compliant

Number of Terminations :

2

Power Dissipation :

250W

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Current Rating :

80A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

6.3m Ω @ 69A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Terminal Form :

Gull wing

Reach Compliance Code :

Unknown

Vgs(th) (Max) @ Id :

2V @ 180μA

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Lead Free :

Contains Lead

Avalanche Energy Rating (Eas) :

530 mJ

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3

Voltage - Rated DC :

55V

Pin Count :

4

Pulsed Drain Current-Max (IDM) :

320A

Continuous Drain Current (ID) :

80A

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

250W Tc

FET Type :

N-Channel

Published :

2003

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified