SPB80N06S2L-05

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

RoHS Status :

Non-RoHS Compliant

Reach Compliance Code :

Unknown

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Lead Free :

Contains Lead

Pin Count :

4

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 80A, 10V

Voltage - Rated DC :

55V

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Mount :

Surface Mount

Continuous Drain Current (ID) :

80A

Pulsed Drain Current-Max (IDM) :

320A

Series :

OptiMOS™

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

800 mJ

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

230nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Transistor Element Material :

SILICON

FET Type :

N-Channel

Vgs (Max) :

±20V

Published :

2003

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

7530pF @ 25V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation-Max :

300W Tc

Current Rating :

80A

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.0057Ohm

Vgs(th) (Max) @ Id :

2V @ 250μA