SPB80N06S2-08

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

Unknown

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Terminal Form :

Gull wing

Voltage - Rated DC :

55V

Pin Count :

4

Drain-source On Resistance-Max :

0.008Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

320A

Number of Terminations :

2

Continuous Drain Current (ID) :

80A

Number of Elements :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Avalanche Energy Rating (Eas) :

450 mJ

Vgs(th) (Max) @ Id :

4V @ 150μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lead Free :

Contains Lead

Input Capacitance (Ciss) (Max) @ Vds :

3800pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

96nC @ 10V

Mounting Type :

Surface Mount

Terminal Position :

Single

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

Non-RoHS Compliant

Additional Feature :

AVALANCHE RATED

ECCN Code :

EAR99

Terminal Finish :

TIN LEAD

Series :

OptiMOS™

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

215W Tc

Packaging :

Tape and Reel (TR)

Current Rating :

80A

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2003

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

8m Ω @ 58A, 10V

JESD-609 Code :

e0