SPB80N06S08ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

RoHS Status :

Non-RoHS Compliant

Power Dissipation :

300W

Number of Elements :

1

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Turn On Delay Time :

22 ns

Published :

2004

Element Configuration :

Single

Drain-source On Resistance-Max :

0.0077Ohm

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs :

187nC @ 10V

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

80A

Rise Time :

53ns

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

54 ns

Terminal Form :

Gull wing

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

32 ns

Power Dissipation-Max :

300W Tc

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

3660pF @ 25V

Terminal Finish :

Tin (Sn)

Mount :

Surface Mount

Max Dual Supply Voltage :

55V

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

80A

Reach Compliance Code :

not_compliant

Mounting Type :

Surface Mount

Halogen Free :

Halogen Free

JESD-609 Code :

e3

Lead Free :

Contains Lead

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

7.7m Ω @ 80A, 10V

Factory Lead Time :

10 Weeks

Voltage - Rated DC :

55V

Avalanche Energy Rating (Eas) :

700 mJ

Drain to Source Breakdown Voltage :

55V

Vgs(th) (Max) @ Id :

4V @ 240µA

Transistor Element Material :

SILICON

Series :

SIPMOS®

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED