SPB77N06S2-12

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Voltage - Rated DC :

55V

Operating Temperature :

-55°C~175°C TJ

Mount :

Surface Mount

RoHS Status :

Non-RoHS Compliant

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.012Ohm

Vgs (Max) :

±20V

Terminal Finish :

MATTE TIN

Terminal Position :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation-Max :

158W Tc

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

12m Ω @ 38A, 10V

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Pulsed Drain Current-Max (IDM) :

320A

Series :

OptiMOS™

Avalanche Energy Rating (Eas) :

280 mJ

Reach Compliance Code :

Unknown

Vgs(th) (Max) @ Id :

4V @ 93µA

Number of Terminations :

2

JESD-609 Code :

e3

Lead Free :

Contains Lead

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Terminal Form :

Gull wing

Pin Count :

4

ECCN Code :

EAR99

Continuous Drain Current (ID) :

80A

Input Capacitance (Ciss) (Max) @ Vds :

2350pF @ 25V

Current Rating :

80A

Mounting Type :

Surface Mount

Published :

2003

FET Type :

N-Channel

Number of Elements :

1

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

77A