SPB73N03S2L-08
- Mfr.Part #
- SPB73N03S2L-08
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 73A TO263-3
- Stock
- 7,470
- In Stock :
- 7,470
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- JESD-609 Code :
- e0
- Vgs(th) (Max) @ Id :
- 2V @ 55μA
- Vgs (Max) :
- ±20V
- Pulsed Drain Current-Max (IDM) :
- 320A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain-source On Resistance-Max :
- 0.0131Ohm
- Rise Time :
- 20ns
- Current - Continuous Drain (Id) @ 25°C :
- 73A Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 2
- Terminal Form :
- Gull wing
- Input Capacitance (Ciss) (Max) @ Vds :
- 1710pF @ 25V
- Reach Compliance Code :
- Unknown
- Peak Reflow Temperature (Cel) :
- 220
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- 30V
- Current Rating :
- 73A
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 8.1m Ω @ 36A, 10V
- Case Connection :
- DRAIN
- Power Dissipation-Max :
- 107W Tc
- RoHS Status :
- Non-RoHS Compliant
- Published :
- 2003
- Avalanche Energy Rating (Eas) :
- 170 mJ
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Gate Charge (Qg) (Max) @ Vgs :
- 46.2nC @ 10V
- Continuous Drain Current (ID) :
- 73A
- Series :
- OptiMOS™
- Operating Temperature :
- -55°C~175°C TJ
- Additional Feature :
- AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Pin Count :
- 4
- JESD-30 Code :
- R-PSSO-G2
- Datasheets
- SPB73N03S2L-08

N-Channel Tape & Reel (TR) 8.1m Ω @ 36A, 10V ±20V 1710pF @ 25V 46.2nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SPB73N03S2L-08 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 170 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1710pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is a peak drain current of 320A, its maximum pulsed drain current.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
SPB73N03S2L-08 Features
the avalanche energy rating (Eas) is 170 mJ
a continuous drain current (ID) of 73A
based on its rated peak drain current 320A.
SPB73N03S2L-08 Applications
There are a lot of Infineon Technologies
SPB73N03S2L-08 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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