SPB70N10L

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Voltage - Rated DC :

100V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application :

SWITCHING

RoHS Status :

Non-RoHS Compliant

Avalanche Energy Rating (Eas) :

700 mJ

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Power Dissipation-Max :

250W Tc

Continuous Drain Current (ID) :

70A

Power Dissipation :

250W

Transistor Element Material :

SILICON

Pin Count :

4

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

4540pF @ 25V

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

280A

Terminal Finish :

MATTE TIN

Series :

SIPMOS®

Lead Free :

Contains Lead

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Published :

2005

Number of Terminations :

2

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

16m Ω @ 50A, 10V

Current Rating :

70A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 2mA

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Reach Compliance Code :

Unknown

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.025Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE