SPB35N10 G
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- Mfr.Part #
- SPB35N10 G
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 35A TO263-3
- Stock
- 42,485
- In Stock ：
- 42,485
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 65nC @ 10V
- Published :
- 2002
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~175°C TJ
- Series :
- SIPMOS®
- Rds On (Max) @ Id, Vgs :
- 44m Ω @ 26.4A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 150W Tc
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 100V
- Vgs (Max) :
- ±20V
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 4V @ 83μA
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Input Capacitance (Ciss) (Max) @ Vds :
- 1570pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 35A Tc
- Datasheets
- SPB35N10 G
N-Channel Tape & Reel (TR) 44m Ω @ 26.4A, 10V ±20V 1570pF @ 25V 65nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SPB35N10 G Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1570pF @ 25V maximal input capacitance.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
SPB35N10 G Features
a 100V drain to source voltage (Vdss)
SPB35N10 G Applications
There are a lot of Infineon Technologies
SPB35N10 G applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| SPB35N10 | Infineon Technologies | 49,739 | MOSFET N-CH 100V 35A TO263-3 |
| SPB35N10T | Infineon Technologies | 43,779 | MOSFET N-CH 100V 35A TO263-3 |
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