SPB35N10T

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Rds On (Max) @ Id, Vgs :

44mOhm @ 26.4A, 10V

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1570pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 83μA

Drain to Source Voltage (Vdss) :

100V

Rds On Max :

44 mΩ

Series :

SIPMOS®

Published :

2002

Current Rating :

35A

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Voltage - Rated DC :

100V

Lead Free :

Lead Free

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rise Time :

63ns

RoHS Status :

RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Continuous Drain Current (ID) :

35A

Power Dissipation-Max :

150W Tc

Mounting Type :

Surface Mount

Mount :

Surface Mount

Supplier Device Package :

PG-TO263-3-2

Input Capacitance :

1.57nF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)