SPB21N10T

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

56ns

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Packaging :

Tape and Reel (TR)

Supplier Device Package :

PG-TO263-3-2

Input Capacitance (Ciss) (Max) @ Vds :

865pF @ 25V

Current Rating :

21A

Continuous Drain Current (ID) :

21A

Lead Free :

Lead Free

Vgs (Max) :

±20V

Series :

SIPMOS®

Voltage - Rated DC :

100V

Power Dissipation-Max :

90W Tc

Input Capacitance :

865pF

Vgs(th) (Max) @ Id :

4V @ 44μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

80mOhm @ 15A, 10V

Mount :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

38.4nC @ 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Voltage (Vdss) :

100V

RoHS Status :

RoHS Compliant

Published :

2002

FET Type :

N-Channel

Rds On Max :

80 mΩ