SPB20N60C3ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

114nC @ 10V

Avalanche Energy Rating (Eas) :

690 mJ

FET Type :

N-Channel

Pbfree Code :

No

Pulsed Drain Current-Max (IDM) :

62.1A

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

600V

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

20.7A

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

20.7A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

208W Tc

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.19Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

3.9V @ 1mA

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

650V

Published :

2002

Reach Compliance Code :

not_compliant

JESD-609 Code :

e3

Surface Mount :

yes

Terminal Position :

Single

Pin Count :

4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Additional Feature :

AVALANCHE RATED

Number of Elements :

1

Series :

CoolMOS™

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

190m Ω @ 13.1A, 10V