SPB21N10 G

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Mfr.Part #
SPB21N10 G
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 100V 21A TO263-3
Stock
30,899
In Stock :
30,899

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Drain Current-Max (Abs) (ID) :
21A
Configuration :
Single
Mounting Type :
Surface Mount
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Reach Compliance Code :
Unknown
Published :
2002
Vgs(th) (Max) @ Id :
4V @ 44μA
Rds On (Max) @ Id, Vgs :
80m Ω @ 15A, 10V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Current - Continuous Drain (Id) @ 25°C :
21A Tc
Power Dissipation-Max :
90W Tc
FET Type :
N-Channel
Surface Mount :
yes
Drain to Source Voltage (Vdss) :
100V
Operating Mode :
ENHANCEMENT MODE
RoHS Status :
RoHS Compliant
Series :
SIPMOS®
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
865pF @ 25V
Operating Temperature :
-55°C~175°C TJ
Packaging :
Tape and Reel (TR)
Gate Charge (Qg) (Max) @ Vgs :
38.4nC @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
SPB21N10 G
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies SPB21N10 G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~175°C TJ, SPB21N10 G pinout, SPB21N10 G datasheet PDF, SPB21N10 G amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies SPB21N10 G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies SPB21N10 G


N-Channel Tape & Reel (TR) 80m Ω @ 15A, 10V ±20V 865pF @ 25V 38.4nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SPB21N10 G Overview


A device's maximum input capacitance is 865pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 21A, and it is the maximum continuous current the device can conduct.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

SPB21N10 G Features


a 100V drain to source voltage (Vdss)


SPB21N10 G Applications


There are a lot of Infineon Technologies
SPB21N10 G applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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