SPA20N65C3XK
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- Mfr.Part #
- SPA20N65C3XK
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- SPA20N65 - 650V AND 700V COOLMOS
- Stock
- 165
- In Stock ：
- 165
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-220-3 Full Pack
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Turn-Off Delay Time :
- 67 ns
- Voltage - Rated DC :
- 650V
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Through Hole
- Continuous Drain Current (ID) :
- 20.7A
- Qualification Status :
- Not Qualified
- Mount :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 20V
- Case Connection :
- Isolated
- Current - Continuous Drain (Id) @ 25°C :
- 20.7A Tc
- Avalanche Energy Rating (Eas) :
- 690 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 114nC @ 10V
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 2400pF @ 25V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Series :
- CoolMOS™
- Power Dissipation :
- 34.5W
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Additional Feature :
- AVALANCHE RATED
- Vgs(th) (Max) @ Id :
- 3.9V @ 1mA
- Power Dissipation-Max :
- 34.5W Tc
- Turn On Delay Time :
- 10 ns
- Published :
- 2005
- Terminal Position :
- Single
- FET Type :
- N-Channel
- Halogen Free :
- Halogen Free
- Rise Time :
- 5ns
- Packaging :
- Tube
- Vgs (Max) :
- ±20V
- Fall Time (Typ) :
- 4.5 ns
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Current Rating :
- 20.7A
- Terminal Finish :
- Tin (Sn)
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 13.1A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Max Dual Supply Voltage :
- 650V
- JEDEC-95 Code :
- TO-220AB
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- SPA20N65C3XK
N-Channel Tube 190m Ω @ 13.1A, 10V ±20V 2400pF @ 25V 114nC @ 10V TO-220-3 Full Pack
SPA20N65C3XKSA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 690 mJ.A device's maximum input capacitance is 2400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 20.7A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 67 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 650V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.
SPA20N65C3XKSA1 Features
the avalanche energy rating (Eas) is 690 mJ
a continuous drain current (ID) of 20.7A
the turn-off delay time is 67 ns
SPA20N65C3XKSA1 Applications
There are a lot of Infineon Technologies
SPA20N65C3XKSA1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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