SPA20N60CFDXKSA1
- Mfr.Part #
- SPA20N60CFDXKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 20.7A TO220-FP
- Stock
- 38,453
- In Stock :
- 38,453
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max Dual Supply Voltage :
- 600V
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Avalanche Energy Rating (Eas) :
- 690 mJ
- Power Dissipation-Max :
- 35W Tc
- Additional Feature :
- AVALANCHE RATED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Package / Case :
- TO-220-3 Full Pack
- Case Connection :
- Isolated
- Gate Charge (Qg) (Max) @ Vgs :
- 124nC @ 10V
- FET Type :
- N-Channel
- Published :
- 2006
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 2400pF @ 25V
- Pulsed Drain Current-Max (IDM) :
- 52A
- Drain-source On Resistance-Max :
- 0.22Ohm
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Series :
- CoolMOS™
- Number of Terminations :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 20.7A Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 220m Ω @ 13.1A, 10V
- Transistor Element Material :
- SILICON
- Halogen Free :
- Halogen Free
- JESD-609 Code :
- e3
- Turn On Delay Time :
- 12 ns
- Fall Time (Typ) :
- 6.4 ns
- JEDEC-95 Code :
- TO-220AB
- Continuous Drain Current (ID) :
- 20.7A
- Power Dissipation :
- 35W
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pbfree Code :
- yes
- Pin Count :
- 3
- Qualification Status :
- Not Qualified
- Datasheets
- SPA20N60CFDXKSA1

N-Channel Tube 220m Ω @ 13.1A, 10V ±20V 2400pF @ 25V 124nC @ 10V TO-220-3 Full Pack
SPA20N60CFDXKSA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 690 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2400pF @ 25V.This device conducts a continuous drain current (ID) of 20.7A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 52A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 12 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 600V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
SPA20N60CFDXKSA1 Features
the avalanche energy rating (Eas) is 690 mJ
a continuous drain current (ID) of 20.7A
based on its rated peak drain current 52A.
SPA20N60CFDXKSA1 Applications
There are a lot of Infineon Technologies
SPA20N60CFDXKSA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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