SMMBTA92LT1G
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- Mfr.Part #
- SMMBTA92LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 300V 0.5A SOT23-3
- Stock
- 89,611
- In Stock ：
- 89,611
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 25
- Transistor Type :
- PNP
- Operating Temperature :
- -55°C~150°C TJ
- Surface Mount :
- yes
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 9 Weeks
- Collector Emitter Voltage (VCEO) :
- 300V
- Gain Bandwidth Product :
- 50MHz
- Base Part Number :
- MMBTA92
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 250nA ICBO
- Polarity/Channel Type :
- PNP
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- -500mV
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 19 hours ago)
- Published :
- 2010
- Max Collector Current :
- 500mA
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Frequency :
- 50MHz
- Collector Base Voltage (VCBO) :
- 300V
- Width :
- 2.64mm
- Power Dissipation :
- 300mW
- Transition Frequency :
- 50MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 30mA 10V
- Max Power Dissipation :
- 300mW
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Height :
- 1.11mm
- Pin Count :
- 3
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 300V
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 300V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Transistor Element Material :
- SILICON
- Length :
- 3.04mm
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- SMMBTA92LT1G
PNP -55°C~150°C TJ 250nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SMMBTA92LT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 25 @ 30mA 10V.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 300V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
SMMBTA92LT1G Features
the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
a transition frequency of 50MHz
SMMBTA92LT1G Applications
There are a lot of ON Semiconductor
SMMBTA92LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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