SMMBTA56LT3G
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- Mfr.Part #
- SMMBTA56LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 0.5A SOT23-3
- Stock
- 15,055
- In Stock ：
- 15,055
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin (Sn)
- Surface Mount :
- yes
- hFE Min :
- 100
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Base Part Number :
- MMBTA56
- Height :
- 1.11mm
- Power Dissipation :
- 300mW
- Length :
- 3.04mm
- Width :
- 2.64mm
- Current - Collector Cutoff (Max) :
- 100nA
- Radiation Hardening :
- No
- Published :
- 2011
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 50MHz
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Pin Count :
- 3
- Max Collector Current :
- 500mA
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 80V
- Polarity/Channel Type :
- PNP
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Weight :
- 1.437803g
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 80V
- Element Configuration :
- Single
- Factory Lead Time :
- 4 Weeks
- Transition Frequency :
- 50MHz
- Max Power Dissipation :
- 300mW
- Emitter Base Voltage (VEBO) :
- 4V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Pbfree Code :
- yes
- Power - Max :
- 225mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Saturation Voltage :
- -250mV
- Collector Base Voltage (VCBO) :
- 80V
- Transistor Application :
- AMPLIFIER
- Transistor Type :
- PNP
- Frequency :
- 50MHz
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- SMMBTA56LT3G
PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SMMBTA56LT3G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.The emitter base voltage can be kept at 4V for high efficiency.The part has a transition frequency of 50MHz.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
SMMBTA56LT3G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
a transition frequency of 50MHz
SMMBTA56LT3G Applications
There are a lot of ON Semiconductor
SMMBTA56LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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