SMMBTA42LT1G
- Mfr.Part #
- SMMBTA42LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A SOT23-3
- Stock
- 104,264
- In Stock :
- 104,264
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 500mA
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 500mA
- Max Power Dissipation :
- 300mW
- JESD-609 Code :
- e3
- Power - Max :
- 225mW
- Pin Count :
- 3
- Surface Mount :
- yes
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Base Part Number :
- MMBTA42
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Transition Frequency :
- 50MHz
- Published :
- 2009
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Elements :
- 1
- Frequency :
- 50MHz
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- -55°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 300V
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 300V
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Power Dissipation :
- 300mW
- Collector Emitter Breakdown Voltage :
- 300V
- Number of Pins :
- 3
- Contact Plating :
- Tin
- Factory Lead Time :
- 7 Weeks
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Datasheets
- SMMBTA42LT1G

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SMMBTA42LT1G Overview
In this device, the DC current gain is 40 @ 30mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 2mA, 20mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.50MHz is present in the transition frequency.Maximum collector currents can be below 500mA volts.
SMMBTA42LT1G Features
the DC current gain for this device is 40 @ 30mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
a transition frequency of 50MHz
SMMBTA42LT1G Applications
There are a lot of ON Semiconductor
SMMBTA42LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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