SMMBTA42LT1G

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Mfr.Part #
SMMBTA42LT1G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 300V 0.5A SOT23-3
Stock
104,264
In Stock :
104,264

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Current - Collector (Ic) (Max) :
500mA
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Collector Current :
500mA
Max Power Dissipation :
300mW
JESD-609 Code :
e3
Power - Max :
225mW
Pin Count :
3
Surface Mount :
yes
Element Configuration :
Single
Terminal Position :
Dual
Base Part Number :
MMBTA42
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 30mA 10V
Terminal Form :
Gull wing
Packaging :
Tape and Reel (TR)
Vce Saturation (Max) @ Ib, Ic :
500mV @ 2mA, 20mA
Transition Frequency :
50MHz
Published :
2009
Emitter Base Voltage (VEBO) :
6V
Number of Elements :
1
Frequency :
50MHz
Radiation Hardening :
No
Polarity/Channel Type :
NPN
Current - Collector Cutoff (Max) :
100nA ICBO
Operating Temperature :
-55°C~150°C TJ
Collector Base Voltage (VCBO) :
300V
Mounting Type :
Surface Mount
Transistor Type :
NPN
Number of Terminations :
3
Collector Emitter Voltage (VCEO) :
300V
Pbfree Code :
yes
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Lead Free :
Lead Free
Power Dissipation :
300mW
Collector Emitter Breakdown Voltage :
300V
Number of Pins :
3
Contact Plating :
Tin
Factory Lead Time :
7 Weeks
Package / Case :
TO-236-3, SC-59, SOT-23-3
Datasheets
SMMBTA42LT1G
Introducing Transistors - Bipolar (BJT) - Single onsemi SMMBTA42LT1G from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:MMBTA42, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:3, Number of Pins:3, Package / Case:TO-236-3, SC-59, SOT-23-3, SMMBTA42LT1G pinout, SMMBTA42LT1G datasheet PDF, SMMBTA42LT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi SMMBTA42LT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi SMMBTA42LT1G


NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

SMMBTA42LT1G Overview


In this device, the DC current gain is 40 @ 30mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 2mA, 20mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.50MHz is present in the transition frequency.Maximum collector currents can be below 500mA volts.

SMMBTA42LT1G Features


the DC current gain for this device is 40 @ 30mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
a transition frequency of 50MHz


SMMBTA42LT1G Applications


There are a lot of ON Semiconductor
SMMBTA42LT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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