SMMBTA14LT1G
- Mfr.Part #
- SMMBTA14LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 30V 0.3A SOT23-3
- Stock
- 4,181
- In Stock :
- 4,181
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Surface Mount :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Halogen Free :
- Halogen Free
- Radiation Hardening :
- No
- Max Power Dissipation :
- 225mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Base Voltage (VCBO) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 30V
- Frequency - Transition :
- 125MHz
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Published :
- 2009
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Transistor Type :
- NPN - Darlington
- Max Collector Current :
- 300mA
- Collector Emitter Saturation Voltage :
- 1.5V
- Polarity :
- NPN
- Number of Elements :
- 1
- Element Configuration :
- Single
- Transition Frequency :
- 125MHz
- Collector Emitter Voltage (VCEO) :
- 30V
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Power - Max :
- 225mW
- Terminal Finish :
- Tin (Sn)
- Base Part Number :
- MMBTA14
- Number of Pins :
- 3
- Factory Lead Time :
- 8 Weeks
- Emitter Base Voltage (VEBO) :
- 10V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 100mA 5V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Datasheets
- SMMBTA14LT1G

NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SMMBTA14LT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20000 @ 100mA 5V.The collector emitter saturation voltage is 1.5V, which allows for maximum design flexibility.When VCE saturation is 1.5V @ 100μA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 10V can achieve high levels of efficiency.In the part, the transition frequency is 125MHz.A maximum collector current of 300mA volts can be achieved.
SMMBTA14LT1G Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 125MHz
SMMBTA14LT1G Applications
There are a lot of ON Semiconductor
SMMBTA14LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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