SMMBTA14LT1G

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Mfr.Part #
SMMBTA14LT1G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN DARL 30V 0.3A SOT23-3
Stock
4,181
In Stock :
4,181

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Surface Mount :
yes
Operating Temperature :
-55°C~150°C TJ
Pin Count :
3
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Lead Free :
Lead Free
RoHS Status :
ROHS3 Compliant
Halogen Free :
Halogen Free
Radiation Hardening :
No
Max Power Dissipation :
225mW
Package / Case :
TO-236-3, SC-59, SOT-23-3
Collector Base Voltage (VCBO) :
30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Breakdown Voltage :
30V
Frequency - Transition :
125MHz
ECCN Code :
EAR99
Pbfree Code :
yes
Published :
2009
Packaging :
Tape and Reel (TR)
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 100µA, 100mA
Transistor Type :
NPN - Darlington
Max Collector Current :
300mA
Collector Emitter Saturation Voltage :
1.5V
Polarity :
NPN
Number of Elements :
1
Element Configuration :
Single
Transition Frequency :
125MHz
Collector Emitter Voltage (VCEO) :
30V
JESD-609 Code :
e3
Mounting Type :
Surface Mount
Power - Max :
225mW
Terminal Finish :
Tin (Sn)
Base Part Number :
MMBTA14
Number of Pins :
3
Factory Lead Time :
8 Weeks
Emitter Base Voltage (VEBO) :
10V
DC Current Gain (hFE) (Min) @ Ic, Vce :
20000 @ 100mA 5V
Current - Collector Cutoff (Max) :
100nA ICBO
Datasheets
SMMBTA14LT1G
Introducing Transistors - Bipolar (BJT) - Single onsemi SMMBTA14LT1G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-236-3, SC-59, SOT-23-3, Mounting Type:Surface Mount, Base Part Number:MMBTA14, Number of Pins:3, SMMBTA14LT1G pinout, SMMBTA14LT1G datasheet PDF, SMMBTA14LT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi SMMBTA14LT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi SMMBTA14LT1G


NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

SMMBTA14LT1G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20000 @ 100mA 5V.The collector emitter saturation voltage is 1.5V, which allows for maximum design flexibility.When VCE saturation is 1.5V @ 100μA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 10V can achieve high levels of efficiency.In the part, the transition frequency is 125MHz.A maximum collector current of 300mA volts can be achieved.

SMMBTA14LT1G Features


the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 125MHz


SMMBTA14LT1G Applications


There are a lot of ON Semiconductor
SMMBTA14LT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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