SMMBTA06WT1G
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- Mfr.Part #
- SMMBTA06WT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A SC70-3
- Stock
- 2,608
- In Stock ：
- 2,608
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Continuous Collector Current :
- 500mA
- Max Power Dissipation :
- 150mW
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 100MHz
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Reference Standard :
- AEC-Q101
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- AMPLIFIER
- Transistor Element Material :
- SILICON
- Surface Mount :
- yes
- Mounting Type :
- Surface Mount
- Base Part Number :
- MMBTA06
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- hFE Min :
- 100
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 80V
- Weight :
- 6.208546mg
- Published :
- 2012
- Collector Emitter Voltage (VCEO) :
- 80V
- Transition Frequency :
- 100MHz
- Collector Emitter Saturation Voltage :
- 250mV
- Terminal Finish :
- Tin (Sn)
- Max Collector Current :
- 500mA
- Emitter Base Voltage (VEBO) :
- 4V
- Number of Elements :
- 1
- Factory Lead Time :
- 4 Weeks
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 80V
- Package / Case :
- SC-70, SOT-323
- Datasheets
- SMMBTA06WT1G
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
SMMBTA06WT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 10mA, 100mA.Continuous collector voltages of 500mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 500mA volts.
SMMBTA06WT1G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
a transition frequency of 100MHz
SMMBTA06WT1G Applications
There are a lot of ON Semiconductor
SMMBTA06WT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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