SMMBTA06LT3G
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- Mfr.Part #
- SMMBTA06LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A SOT23-3
- Stock
- 2,934
- In Stock ：
- 2,934
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 5 Weeks
- ECCN Code :
- EAR99
- Surface Mount :
- yes
- Max Breakdown Voltage :
- 80V
- Length :
- 3.04mm
- Number of Terminations :
- 3
- Published :
- 2009
- Operating Temperature :
- -55°C~150°C TJ
- Max Collector Current :
- 500mA
- Collector Emitter Saturation Voltage :
- 250mV
- Current - Collector Cutoff (Max) :
- 100nA
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- NPN
- Transistor Application :
- AMPLIFIER
- Base Part Number :
- MMBTA06
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Transition Frequency :
- 100MHz
- Element Configuration :
- Single
- Pin Count :
- 3
- Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 80V
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 300mW
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 80V
- Power - Max :
- 225mW
- Lead Free :
- Lead Free
- Height :
- 1.11mm
- Number of Pins :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Pbfree Code :
- yes
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Voltage (VCEO) :
- 80V
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 4V
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Width :
- 2.64mm
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Terminal Finish :
- Tin (Sn)
- Power Dissipation :
- 300mW
- Datasheets
- SMMBTA06LT3G
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SMMBTA06LT3G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 100mA 1V.With a collector emitter saturation voltage of 250mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 10mA, 100mA.If the emitter base voltage is kept at 4V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 80V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
SMMBTA06LT3G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
a transition frequency of 100MHz
SMMBTA06LT3G Applications
There are a lot of ON Semiconductor
SMMBTA06LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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