SMMBTA06LT1G

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Mfr.Part #
SMMBTA06LT1G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 80V 0.5A SOT23-3
Stock
6,801
In Stock :
6,801

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Max Breakdown Voltage :
80V
Terminal Position :
Dual
Pin Count :
3
Pbfree Code :
yes
Current - Collector Cutoff (Max) :
100nA
Operating Temperature :
-55°C~150°C TJ
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 100mA 1V
JESD-609 Code :
e3
Surface Mount :
yes
Base Part Number :
MMBTA06
Vce Saturation (Max) @ Ib, Ic :
250mV @ 10mA, 100mA
Power - Max :
225mW
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
Width :
2.64mm
Max Collector Current :
500mA
Collector Base Voltage (VCBO) :
80V
ECCN Code :
EAR99
Transistor Type :
NPN
RoHS Status :
ROHS3 Compliant
Terminal Form :
Gull wing
Polarity/Channel Type :
NPN
Collector Emitter Saturation Voltage :
250mV
Number of Elements :
1
Collector Emitter Voltage (VCEO) :
80V
Frequency :
100MHz
Factory Lead Time :
4 Weeks
Mounting Type :
Surface Mount
Lead Free :
Lead Free
Collector Emitter Breakdown Voltage :
80V
REACH SVHC :
No SVHC
Package / Case :
TO-236-3, SC-59, SOT-23-3
Length :
3.04mm
Radiation Hardening :
No
Height :
1.11mm
Transistor Application :
AMPLIFIER
Number of Terminations :
3
Element Configuration :
Single
Transition Frequency :
100MHz
Gain Bandwidth Product :
100MHz
Contact Plating :
Tin
Transistor Element Material :
SILICON
Power Dissipation :
300mW
Packaging :
Tape and Reel (TR)
Emitter Base Voltage (VEBO) :
4V
Max Power Dissipation :
225mW
Published :
2004
Datasheets
SMMBTA06LT1G
Introducing Transistors - Bipolar (BJT) - Single onsemi SMMBTA06LT1G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Base Part Number:MMBTA06, Number of Pins:3, Mounting Type:Surface Mount, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Terminations:3, SMMBTA06LT1G pinout, SMMBTA06LT1G datasheet PDF, SMMBTA06LT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi SMMBTA06LT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi SMMBTA06LT1G


NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

SMMBTA06LT1G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.The emitter base voltage can be kept at 4V for high efficiency.The part has a transition frequency of 100MHz.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.

SMMBTA06LT1G Features


the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
a transition frequency of 100MHz


SMMBTA06LT1G Applications


There are a lot of ON Semiconductor
SMMBTA06LT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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