SMMBT6427LT1G

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Mfr.Part #
SMMBT6427LT1G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN DARL 40V 0.5A SOT23-3
Stock
31,683
In Stock :
31,683

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Mounting Type :
Surface Mount
Published :
2009
Max Collector Current :
500mA
Package / Case :
TO-236-3, SC-59, SOT-23-3
Element Configuration :
Single
RoHS Status :
ROHS3 Compliant
Terminal Finish :
Tin (Sn)
Halogen Free :
Halogen Free
DC Current Gain (hFE) (Min) @ Ic, Vce :
20000 @ 100mA 5V
Max Operating Temperature :
150°C
Radiation Hardening :
No
Width :
1.4mm
Terminal Position :
Dual
Terminal Form :
Gull wing
Factory Lead Time :
11 Weeks
Number of Pins :
3
Packaging :
Tape and Reel (TR)
Collector Emitter Saturation Voltage :
1.2V
Collector Emitter Voltage (VCEO) :
40V
Lead Free :
Lead Free
Max Power Dissipation :
225mW
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Type :
NPN - Darlington
Polarity :
NPN
Base Part Number :
MMBT6427
Emitter Base Voltage (VEBO) :
12V
Collector Base Voltage (VCBO) :
40V
Height :
1.01mm
Current - Collector Cutoff (Max) :
1μA
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 500μA, 500mA
Number of Elements :
1
Length :
3.04mm
Surface Mount :
yes
Collector Emitter Breakdown Voltage :
40V
JESD-609 Code :
e3
ECCN Code :
EAR99
Number of Terminations :
3
Pin Count :
3
Min Operating Temperature :
-55°C
Pbfree Code :
yes
Datasheets
SMMBT6427LT1G
Introducing Transistors - Bipolar (BJT) - Single onsemi SMMBT6427LT1G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Pins:3, Base Part Number:MMBT6427, Number of Terminations:3, SMMBT6427LT1G pinout, SMMBT6427LT1G datasheet PDF, SMMBT6427LT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi SMMBT6427LT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi SMMBT6427LT1G


NPN - Darlington 1μA 1 Elements 3 Terminations TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

SMMBT6427LT1G Overview


DC current gain in this device equals 20000 @ 100mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1.2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 500μA, 500mA.An emitter's base voltage can be kept at 12V to gain high efficiency.In extreme cases, the collector current can be as low as 500mA volts.

SMMBT6427LT1G Features


the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.5V @ 500μA, 500mA
the emitter base voltage is kept at 12V


SMMBT6427LT1G Applications


There are a lot of ON Semiconductor
SMMBT6427LT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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