SMMBT5551LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e3

Surface Mount :

yes

Polarity/Channel Type :

N-Channel

Base Part Number :

MMBT5551

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Collector Base Voltage (VCBO) :

180V

REACH SVHC :

No SVHC

Pin Count :

3

Emitter Base Voltage (VEBO) :

6V

hFE Min :

80

Max Breakdown Voltage :

160V

Terminal Form :

Gull wing

Number of Terminations :

3

Pbfree Code :

yes

Number of Pins :

3

Max Power Dissipation :

225mW

Transistor Application :

SWITCHING

Transistor Type :

NPN

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Collector Emitter Saturation Voltage :

200mV

Number of Elements :

1

Width :

2.64mm

Published :

2001

Terminal Position :

Dual

Contact Plating :

Tin

Package / Case :

TO-236-3, SC-59, SOT-23-3

Current - Collector Cutoff (Max) :

100nA

Length :

3.04mm

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

160V

VCEsat-Max :

0.2 V

Element Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Height :

1.11mm

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

160V

Factory Lead Time :

4 Weeks

Mounting Type :

Surface Mount

Radiation Hardening :

No

Max Collector Current :

60mA

Power Dissipation :

300mW

Current - Collector (Ic) (Max) :

600mA

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)