SMMBT5401LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Polarity/Channel Type :

PNP

Number of Pins :

3

Transistor Element Material :

SILICON

Transition Frequency :

100MHz

Transistor Type :

PNP

Collector Emitter Voltage (VCEO) :

150V

Operating Temperature :

-55°C~150°C TJ

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Saturation Voltage :

-200mV

Gain Bandwidth Product :

100MHz

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Length :

3.04mm

Max Collector Current :

500mA

Published :

2014

Terminal Position :

Dual

Collector Emitter Breakdown Voltage :

150V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Max Power Dissipation :

300mW

Current - Collector Cutoff (Max) :

50nA ICBO

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Surface Mount :

yes

Element Configuration :

Single

Radiation Hardening :

No

Frequency :

300MHz

Height :

1.01mm

Package / Case :

TO-236-3, SC-59, SOT-23-3

Collector Base Voltage (VCBO) :

160V

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

Number of Terminations :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 10mA 5V

JESD-609 Code :

e3

Contact Plating :

Tin

Pbfree Code :

yes

hFE Min :

60

Max Breakdown Voltage :

150V

Factory Lead Time :

8 Weeks

Pin Count :

3

Power Dissipation :

300mW

Width :

1.4mm

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Base Part Number :

MMBT5401