SMMBT5089LT1G

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Mfr.Part #
SMMBT5089LT1G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 25V 0.05A SOT23-3
Stock
2,406
In Stock :
2,406

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
RoHS Status :
ROHS3 Compliant
Mounting Type :
Surface Mount
Surface Mount :
yes
Transistor Element Material :
SILICON
Collector Emitter Voltage (VCEO) :
500mV
Collector Emitter Breakdown Voltage :
25V
Power - Max :
300mW
Vce Saturation (Max) @ Ib, Ic :
500mV @ 1mA, 10mA
Transistor Type :
NPN
Published :
2009
Terminal Finish :
Tin (Sn)
Number of Elements :
1
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Configuration :
Single
Max Power Dissipation :
300mW
Operating Temperature :
-55°C~150°C TJ
Pin Count :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
400 @ 100μA 5V
Factory Lead Time :
4 Weeks
Collector Base Voltage (VCBO) :
35V
Package / Case :
TO-236-3, SC-59, SOT-23-3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Reference Standard :
AEC-Q101
Frequency - Transition :
50MHz
ECCN Code :
EAR99
JESD-609 Code :
e3
Packaging :
Tape and Reel (TR)
Number of Pins :
3
Terminal Form :
Gull wing
Number of Terminations :
3
Radiation Hardening :
No
Lead Free :
Lead Free
Polarity/Channel Type :
NPN
Base Part Number :
MMBT5089
Transition Frequency :
50MHz
Current - Collector Cutoff (Max) :
50nA ICBO
Terminal Position :
Dual
Max Collector Current :
50mA
Pbfree Code :
yes
Datasheets
SMMBT5089LT1G
Introducing Transistors - Bipolar (BJT) - Single onsemi SMMBT5089LT1G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Pins:3, Number of Terminations:3, Base Part Number:MMBT5089, SMMBT5089LT1G pinout, SMMBT5089LT1G datasheet PDF, SMMBT5089LT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi SMMBT5089LT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi SMMBT5089LT1G


NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

SMMBT5089LT1G Overview


In this device, the DC current gain is 400 @ 100μA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 1mA, 10mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 50mA volts at Single BJT transistors maximum.

SMMBT5089LT1G Features


the DC current gain for this device is 400 @ 100μA 5V
the vce saturation(Max) is 500mV @ 1mA, 10mA
a transition frequency of 50MHz


SMMBT5089LT1G Applications


There are a lot of ON Semiconductor
SMMBT5089LT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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