SMMBT5088LT1G
- Mfr.Part #
- SMMBT5088LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.05A SOT23-3
- Stock
- 4,688
- In Stock :
- 4,688
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100μA 5V
- Base Part Number :
- MMBT5088
- Reference Standard :
- AEC-Q101
- Max Power Dissipation :
- 300mW
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Number of Terminations :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Surface Mount :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2009
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 30V
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Transition Frequency :
- 50MHz
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Frequency - Transition :
- 50MHz
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 500mV
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Power - Max :
- 300mW
- Configuration :
- Single
- ECCN Code :
- EAR99
- Factory Lead Time :
- 2 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- Terminal Finish :
- Tin (Sn)
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Max Collector Current :
- 50mA
- Collector Emitter Breakdown Voltage :
- 30V
- Datasheets
- SMMBT5088LT1G

NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SMMBT5088LT1G Overview
In this device, the DC current gain is 300 @ 100μA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 1mA, 10mA.50MHz is present in the transition frequency.Maximum collector currents can be below 50mA volts.
SMMBT5088LT1G Features
the DC current gain for this device is 300 @ 100μA 5V
the vce saturation(Max) is 500mV @ 1mA, 10mA
a transition frequency of 50MHz
SMMBT5088LT1G Applications
There are a lot of ON Semiconductor
SMMBT5088LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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