SMMBT5088LT1G

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Mfr.Part #
SMMBT5088LT1G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 30V 0.05A SOT23-3
Stock
4,688
In Stock :
4,688

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
DC Current Gain (hFE) (Min) @ Ic, Vce :
300 @ 100μA 5V
Base Part Number :
MMBT5088
Reference Standard :
AEC-Q101
Max Power Dissipation :
300mW
Current - Collector Cutoff (Max) :
50nA ICBO
Number of Terminations :
3
Package / Case :
TO-236-3, SC-59, SOT-23-3
Surface Mount :
yes
Operating Temperature :
-55°C~150°C TJ
Published :
2009
Polarity/Channel Type :
NPN
Collector Base Voltage (VCBO) :
30V
Mounting Type :
Surface Mount
Terminal Position :
Dual
Number of Elements :
1
Transition Frequency :
50MHz
Transistor Type :
NPN
Number of Pins :
3
Frequency - Transition :
50MHz
Pin Count :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Voltage (VCEO) :
500mV
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
JESD-609 Code :
e3
RoHS Status :
ROHS3 Compliant
Pbfree Code :
yes
Packaging :
Tape and Reel (TR)
Lead Free :
Lead Free
Transistor Element Material :
SILICON
Power - Max :
300mW
Configuration :
Single
ECCN Code :
EAR99
Factory Lead Time :
2 Weeks
Vce Saturation (Max) @ Ib, Ic :
500mV @ 1mA, 10mA
Terminal Finish :
Tin (Sn)
Terminal Form :
Gull wing
Radiation Hardening :
No
Max Collector Current :
50mA
Collector Emitter Breakdown Voltage :
30V
Datasheets
SMMBT5088LT1G
Introducing Transistors - Bipolar (BJT) - Single onsemi SMMBT5088LT1G from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:MMBT5088, Number of Terminations:3, Package / Case:TO-236-3, SC-59, SOT-23-3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Pins:3, SMMBT5088LT1G pinout, SMMBT5088LT1G datasheet PDF, SMMBT5088LT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi SMMBT5088LT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi SMMBT5088LT1G


NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

SMMBT5088LT1G Overview


In this device, the DC current gain is 300 @ 100μA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 1mA, 10mA.50MHz is present in the transition frequency.Maximum collector currents can be below 50mA volts.

SMMBT5088LT1G Features


the DC current gain for this device is 300 @ 100μA 5V
the vce saturation(Max) is 500mV @ 1mA, 10mA
a transition frequency of 50MHz


SMMBT5088LT1G Applications


There are a lot of ON Semiconductor
SMMBT5088LT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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