SMMBT4401LT1G
- Mfr.Part #
- SMMBT4401LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A SOT23-3
- Stock
- 34,370
- In Stock :
- 34,370
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 40V
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Terminal Finish :
- Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 1V
- Published :
- 2001
- Height :
- 1.01mm
- Collector Emitter Saturation Voltage :
- 750mV
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 60V
- Element Configuration :
- Single
- Turn On Time-Max (ton) :
- 255ns
- Surface Mount :
- yes
- Factory Lead Time :
- 6 Weeks
- Terminal Position :
- Dual
- Length :
- 3.04mm
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Transition Frequency :
- 250MHz
- Width :
- 1.4mm
- JESD-609 Code :
- e3
- hFE Min :
- 100
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Terminations :
- 3
- Max Power Dissipation :
- 300mW
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 250MHz
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 40V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 300mW
- Max Collector Current :
- 600mA
- Collector Emitter Breakdown Voltage :
- 40V
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Frequency :
- 250MHz
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- NPN
- Base Part Number :
- MMBT4401
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- Datasheets
- SMMBT4401LT1G

NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SMMBT4401LT1G Overview
DC current gain in this device equals 100 @ 150mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 750mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 750mV @ 50mA, 500mA.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 250MHz.Breakdown input voltage is 40V volts.In extreme cases, the collector current can be as low as 600mA volts.
SMMBT4401LT1G Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
SMMBT4401LT1G Applications
There are a lot of ON Semiconductor
SMMBT4401LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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