SMMBT4401LT1G

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Mfr.Part #
SMMBT4401LT1G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 40V 0.6A SOT23-3
Stock
34,370
In Stock :
34,370

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Voltage (VCEO) :
40V
Lead Free :
Lead Free
Terminal Form :
Gull wing
Terminal Finish :
Tin (Sn)
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 1V
Published :
2001
Height :
1.01mm
Collector Emitter Saturation Voltage :
750mV
Packaging :
Tape and Reel (TR)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Base Voltage (VCBO) :
60V
Element Configuration :
Single
Turn On Time-Max (ton) :
255ns
Surface Mount :
yes
Factory Lead Time :
6 Weeks
Terminal Position :
Dual
Length :
3.04mm
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Transition Frequency :
250MHz
Width :
1.4mm
JESD-609 Code :
e3
hFE Min :
100
Emitter Base Voltage (VEBO) :
6V
Number of Terminations :
3
Max Power Dissipation :
300mW
Pin Count :
3
Transistor Element Material :
SILICON
Gain Bandwidth Product :
250MHz
Radiation Hardening :
No
Max Breakdown Voltage :
40V
Package / Case :
TO-236-3, SC-59, SOT-23-3
RoHS Status :
ROHS3 Compliant
Mounting Type :
Surface Mount
Power Dissipation :
300mW
Max Collector Current :
600mA
Collector Emitter Breakdown Voltage :
40V
ECCN Code :
EAR99
Pbfree Code :
yes
Frequency :
250MHz
Number of Pins :
3
Vce Saturation (Max) @ Ib, Ic :
750mV @ 50mA, 500mA
Operating Temperature :
-55°C~150°C TJ
Transistor Type :
NPN
Base Part Number :
MMBT4401
Number of Elements :
1
Polarity/Channel Type :
NPN
Transistor Application :
SWITCHING
Datasheets
SMMBT4401LT1G
Introducing Transistors - Bipolar (BJT) - Single onsemi SMMBT4401LT1G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-236-3, SC-59, SOT-23-3, Mounting Type:Surface Mount, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Base Part Number:MMBT4401, SMMBT4401LT1G pinout, SMMBT4401LT1G datasheet PDF, SMMBT4401LT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi SMMBT4401LT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi SMMBT4401LT1G


NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

SMMBT4401LT1G Overview


DC current gain in this device equals 100 @ 150mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 750mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 750mV @ 50mA, 500mA.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 250MHz.Breakdown input voltage is 40V volts.In extreme cases, the collector current can be as low as 600mA volts.

SMMBT4401LT1G Features


the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz


SMMBT4401LT1G Applications


There are a lot of ON Semiconductor
SMMBT4401LT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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