SMMBT3906LT3G
- Mfr.Part #
- SMMBT3906LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A SOT23-3
- Stock
- 9,678
- In Stock :
- 9,678
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Series :
- Automotive, AEC-Q101
- Polarity/Channel Type :
- PNP
- Collector Base Voltage (VCBO) :
- 40V
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 5 Weeks
- VCEsat-Max :
- 0.4 V
- Terminal Position :
- Dual
- Base Part Number :
- MMBT3906
- Terminal Finish :
- Tin (Sn)
- Collector-Base Capacitance-Max :
- 4.5pF
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2007
- Gain Bandwidth Product :
- 250MHz
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Number of Elements :
- 1
- Max Power Dissipation :
- 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Surface Mount :
- yes
- Max Collector Current :
- 200mA
- Frequency :
- 250MHz
- Collector Emitter Voltage (VCEO) :
- 40V
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Transistor Type :
- PNP
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 40V
- Turn On Time-Max (ton) :
- 70ns
- Power Dissipation :
- 300mW
- Transition Frequency :
- 250MHz
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Datasheets
- SMMBT3906LT3G

PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SMMBT3906LT3G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 10mA 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 250MHz in the part.When collector current reaches its maximum, it can reach 200mA volts.
SMMBT3906LT3G Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
SMMBT3906LT3G Applications
There are a lot of ON Semiconductor
SMMBT3906LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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