SMMBT3906LT1G
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- Mfr.Part #
- SMMBT3906LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A SOT23-3
- Stock
- 3,712
- In Stock ：
- 3,712
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- -250mV
- Turn On Time-Max (ton) :
- 70ns
- Surface Mount :
- yes
- Lead Free :
- Lead Free
- Width :
- 2.64mm
- Operating Temperature :
- -55°C~150°C TJ
- Collector-Base Capacitance-Max :
- 4.5pF
- Number of Terminations :
- 3
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Power Dissipation :
- 300mW
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 40V
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- PNP
- Max Breakdown Voltage :
- 40V
- Number of Pins :
- 3
- Max Collector Current :
- 200mA
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Height :
- 1.11mm
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Gain Bandwidth Product :
- 250MHz
- Collector Emitter Breakdown Voltage :
- 40V
- Transistor Type :
- PNP
- Pbfree Code :
- yes
- Factory Lead Time :
- 5 Weeks
- Base Part Number :
- MMBT3906
- Contact Plating :
- Tin
- VCEsat-Max :
- 0.4 V
- Number of Elements :
- 1
- Length :
- 3.04mm
- Max Power Dissipation :
- 300mW
- Series :
- Automotive, AEC-Q101
- Transition Frequency :
- 250MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Radiation Hardening :
- No
- Published :
- 2009
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Collector Base Voltage (VCBO) :
- 40V
- Frequency :
- 250MHz
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Datasheets
- SMMBT3906LT1G
PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SMMBT3906LT1G Overview
In this device, the DC current gain is 100 @ 10mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Input voltage breakdown is available at 40V volts.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
SMMBT3906LT1G Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
SMMBT3906LT1G Applications
There are a lot of ON Semiconductor
SMMBT3906LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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