SMMBT3904LT3G
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- Mfr.Part #
- SMMBT3904LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.2A SOT23-3
- Stock
- 74,566
- In Stock ：
- 74,566
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 40V
- Number of Pins :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Finish :
- Tin (Sn)
- Transition Frequency :
- 300MHz
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Max Collector Current :
- 200mA
- Max Power Dissipation :
- 300mW
- Collector Emitter Voltage (VCEO) :
- 40V
- Collector Base Voltage (VCBO) :
- 60V
- Continuous Collector Current :
- 200mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 300mV
- Element Configuration :
- Single
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Surface Mount :
- yes
- Series :
- Automotive, AEC-Q101
- Emitter Base Voltage (VEBO) :
- 6V
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Terminal Position :
- Dual
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- Turn Off Time-Max (toff) :
- 250ns
- Turn On Time-Max (ton) :
- 70ns
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Gain Bandwidth Product :
- 300MHz
- hFE Min :
- 30
- Published :
- 2011
- Factory Lead Time :
- 4 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Packaging :
- Tape and Reel (TR)
- Datasheets
- SMMBT3904LT3G
NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SMMBT3904LT3G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 5mA, 50mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 200mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 300MHz is present in the part.Collector current can be as low as 200mA volts at its maximum.
SMMBT3904LT3G Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
SMMBT3904LT3G Applications
There are a lot of ON Semiconductor
SMMBT3904LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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