SMMBT3904LT3
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- Mfr.Part #
- SMMBT3904LT3
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.2A SOT23-3
- Stock
- 1,994
- In Stock ：
- 1,994
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Series :
- Automotive, AEC-Q101
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 300MHz
- Number of Terminations :
- 3
- Turn On Time-Max (ton) :
- 70ns
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 40V
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 300MHz
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Saturation Voltage :
- 300mV
- Surface Mount :
- yes
- Pbfree Code :
- yes
- Pin Count :
- 3
- JESD-609 Code :
- e3
- hFE Min :
- 30
- Packaging :
- Tape and Reel (TR)
- Turn Off Time-Max (toff) :
- 250ns
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 40V
- Factory Lead Time :
- 4 Weeks
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Terminal Finish :
- Tin (Sn)
- Max Power Dissipation :
- 300mW
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2011
- Max Collector Current :
- 200mA
- Continuous Collector Current :
- 200mA
- Emitter Base Voltage (VEBO) :
- 6V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Datasheets
- SMMBT3904LT3
NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SMMBT3904LT3G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 5mA, 50mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 200mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 300MHz is present in the part.Collector current can be as low as 200mA volts at its maximum.
SMMBT3904LT3G Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
SMMBT3904LT3G Applications
There are a lot of ON Semiconductor
SMMBT3904LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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