SMMBT2907ALT3G
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- Mfr.Part #
- SMMBT2907ALT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A SOT23-3
- Stock
- 2,946
- In Stock ：
- 2,946
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 60V
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- hFE Min :
- 50
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- -5V
- Terminal Finish :
- Tin (Sn)
- Collector Base Voltage (VCBO) :
- 60V
- Published :
- 2007
- Length :
- 3.04mm
- ECCN Code :
- EAR99
- Frequency :
- 200MHz
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Turn On Time-Max (ton) :
- 45ns
- Pin Count :
- 3
- Max Power Dissipation :
- 300mW
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 60V
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 60V
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Factory Lead Time :
- 7 Weeks
- Number of Pins :
- 3
- Power Dissipation :
- 300mW
- Base Part Number :
- MMBT2907A
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transition Frequency :
- 200MHz
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 2.64mm
- Height :
- 1.11mm
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Collector Current :
- -600mA
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- yes
- Gain Bandwidth Product :
- 200MHz
- Collector Emitter Saturation Voltage :
- -400mV
- Max Collector Current :
- 600mA
- Datasheets
- SMMBT2907ALT3G
PNP -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SMMBT2907ALT3G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -400mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.6V @ 50mA, 500mA.Continuous collector voltages of -600mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Parts of this part have transition frequencies of 200MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 600mA volts.
SMMBT2907ALT3G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 200MHz
SMMBT2907ALT3G Applications
There are a lot of ON Semiconductor
SMMBT2907ALT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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