SMMBT2369ALT1G

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Mfr.Part #
SMMBT2369ALT1G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 15V 0.2A SOT23-3
Stock
3,157
In Stock :
3,157

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Max Power Dissipation :
225mW
Collector Emitter Breakdown Voltage :
15V
Terminal Finish :
Tin (Sn)
Vce Saturation (Max) @ Ib, Ic :
500mV @ 10mA, 100mA
Pbfree Code :
yes
Collector Base Voltage (VCBO) :
40V
Number of Terminations :
3
Package / Case :
TO-236-3, SC-59, SOT-23-3
Radiation Hardening :
No
Terminal Form :
Gull wing
Factory Lead Time :
4 Weeks
Power - Max :
225mW
Mounting Type :
Surface Mount
Packaging :
Tape and Reel (TR)
RoHS Status :
ROHS3 Compliant
Pin Count :
3
Current - Collector Cutoff (Max) :
400nA
Published :
2009
Turn Off Time-Max (toff) :
18ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
Terminal Position :
Dual
Operating Temperature :
-55°C~150°C TJ
Number of Pins :
3
Collector Emitter Voltage (VCEO) :
500mV
DC Current Gain (hFE) (Min) @ Ic, Vce :
20 @ 100mA 1V
Reference Standard :
AEC-Q101
Configuration :
Single
Turn On Time-Max (ton) :
12ns
Surface Mount :
yes
JESD-609 Code :
e3
Number of Elements :
1
Transistor Type :
NPN
ECCN Code :
EAR99
Max Collector Current :
200mA
Transistor Element Material :
SILICON
Polarity/Channel Type :
NPN
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Transistor Application :
SWITCHING
Datasheets
SMMBT2369ALT1G
Introducing Transistors - Bipolar (BJT) - Single onsemi SMMBT2369ALT1G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-236-3, SC-59, SOT-23-3, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, SMMBT2369ALT1G pinout, SMMBT2369ALT1G datasheet PDF, SMMBT2369ALT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi SMMBT2369ALT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi SMMBT2369ALT1G


NPN -55°C~150°C TJ 400nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

SMMBT2369ALT1G Overview


In this device, the DC current gain is 20 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 10mA, 100mA.Maximum collector currents can be below 200mA volts.

SMMBT2369ALT1G Features


the DC current gain for this device is 20 @ 100mA 1V
the vce saturation(Max) is 500mV @ 10mA, 100mA


SMMBT2369ALT1G Applications


There are a lot of ON Semiconductor
SMMBT2369ALT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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