SMMBT2369ALT1G
- Mfr.Part #
- SMMBT2369ALT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.2A SOT23-3
- Stock
- 3,157
- In Stock :
- 3,157
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 225mW
- Collector Emitter Breakdown Voltage :
- 15V
- Terminal Finish :
- Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 40V
- Number of Terminations :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 4 Weeks
- Power - Max :
- 225mW
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 400nA
- Published :
- 2009
- Turn Off Time-Max (toff) :
- 18ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 500mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 100mA 1V
- Reference Standard :
- AEC-Q101
- Configuration :
- Single
- Turn On Time-Max (ton) :
- 12ns
- Surface Mount :
- yes
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Max Collector Current :
- 200mA
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Transistor Application :
- SWITCHING
- Datasheets
- SMMBT2369ALT1G

NPN -55°C~150°C TJ 400nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SMMBT2369ALT1G Overview
In this device, the DC current gain is 20 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 10mA, 100mA.Maximum collector currents can be below 200mA volts.
SMMBT2369ALT1G Features
the DC current gain for this device is 20 @ 100mA 1V
the vce saturation(Max) is 500mV @ 10mA, 100mA
SMMBT2369ALT1G Applications
There are a lot of ON Semiconductor
SMMBT2369ALT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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