SISS80DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

122 nC @ 10 V

Product Category :

MOSFET

Number of Elements per Chip :

1

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 10V

Drain to Source Voltage (Vdss) :

20 V

Power Dissipation (Max) :

5W (Ta), 65W (Tc)

Continuous Drain Current Id :

210

Mounting Type :

Surface Mount

Package / Case :

PowerPAK? 1212-8S

Tradename :

TrenchFET

Manufacturer :

Vishay

Product Type :

MOSFET

Vgs (Max) :

+12V, -8V

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

58.3A (Ta), 210A (Tc)

Product Status :

Active

FET Feature :

-

Mounting Style :

SMD/SMT

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Operating Temperature :

-55°C ~ 150°C (TJ)

Transistor Polarity :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

6450 pF @ 10 V

Qualification :

-

Channel Mode :

Enhancement

Channel Type :

N

Pin Count :

8

Supplier Device Package :

PowerPAK? 1212-8S

Minimum Operating Temperature :

- 55 C

MSL :

MSL 1 - Unlimited

Packaging :

MouseReel

Package Type :

PowerPAK 1212-8S

Base Product Number :

SISS80

Maximum Operating Temperature :

+ 150 C

Package :

Digi-Reel?

Number of Channels :

1 Channel

Rds On (Max) @ Id, Vgs :

0.92mOhm @ 10A, 10V

Subcategory :

MOSFETs

Power Dissipation :

65

Series :

TrenchFET? Gen IV

RoHS :

Details

Brand :

Vishay Semiconductors