SISS27DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

20 ns

Mount :

Surface Mount

Terminal Position :

Dual

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

14 Weeks

Mounting Type :

Surface Mount

Height :

830μm

Max Junction Temperature (Tj) :

150°C

Drain to Source Voltage (Vdss) :

30V

Turn-Off Delay Time :

65 ns

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

200A

Packaging :

Cut Tape (CT)

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Number of Pins :

8

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

-30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

S-PDSO-N5

Number of Elements :

1

Number of Channels :

1

Rise Time :

45ns

Transistor Element Material :

SILICON

Published :

2014

Drain-source On Resistance-Max :

0.0056Ohm

Number of Terminations :

5

Series :

TrenchFET®

Power Dissipation-Max :

4.8W Ta 57W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Radiation Hardening :

No

FET Type :

P-Channel

Package / Case :

PowerPAK® 1212-8S

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

-23A

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Power Dissipation :

4.8W

Input Capacitance (Ciss) (Max) @ Vds :

5250pF @ 15V

Rds On (Max) @ Id, Vgs :

5.6m Ω @ 15A, 10V

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Operating Temperature :

-50°C~150°C TJ

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

50A

Turn On Delay Time :

16 ns

Operating Mode :

ENHANCEMENT MODE