SISS10ADN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

4.8W Ta 56.8W Tc

Current - Continuous Drain (Id) @ 25°C :

31.7A Ta 109A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

61nC @ 10V

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Drain to Source Voltage (Vdss) :

40V

Input Capacitance (Ciss) (Max) @ Vds :

3030pF @ 20V

Rds On (Max) @ Id, Vgs :

2.65mOhm @ 15A, 10V

FET Type :

N-Channel

Series :

TrenchFET® Gen IV

Operating Temperature :

-55°C~150°C TJ

Package / Case :

PowerPAK® 1212-8S

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Supplier Device Package :

PowerPAK® 1212-8S (3.3x3.3)

Vgs (Max) :

+20V, -16V

Factory Lead Time :

14 Weeks