SISS71DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1050pF @ 50V

Power Dissipation-Max :

57W Tc

Terminal Finish :

Matte Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-30 Code :

S-PDSO-N5

Number of Pins :

8

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Number of Terminations :

5

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Factory Lead Time :

14 Weeks

Drain to Source Voltage (Vdss) :

100V

Terminal Form :

NO LEAD

Rds On (Max) @ Id, Vgs :

59m Ω @ 5A, 10V

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Published :

2016

Pulsed Drain Current-Max (IDM) :

40A

Series :

ThunderFET®

Avalanche Energy Rating (Eas) :

31 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Continuous Drain Current (ID) :

-23A

Transistor Element Material :

SILICON

Terminal Position :

Dual

ECCN Code :

EAR99

Vgs (Max) :

±20V

JESD-609 Code :

e3

Package / Case :

PowerPAK® 1212-8S

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

-2.5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

P-Channel

Reach Compliance Code :

Unknown

DS Breakdown Voltage-Min :

100V

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ