SISS64DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Avalanche Energy Rating (Eas) :

45 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

Unknown

Factory Lead Time :

14 Weeks

Drain to Source Breakdown Voltage :

30V

Package / Case :

PowerPAK® 1212-8S

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Height :

1.17mm

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

2.1m Ω @ 10A, 10V

Terminal Form :

NO LEAD

JESD-30 Code :

S-PDSO-N5

Turn On Delay Time :

13 ns

Max Junction Temperature (Tj) :

150°C

Drain-source On Resistance-Max :

0.00286Ohm

Number of Elements :

1

ECCN Code :

EAR99

Surface Mount :

yes

Turn-Off Delay Time :

25 ns

Vgs (Max) :

+20V, -16V

Published :

2018

Terminal Position :

Dual

Case Connection :

DRAIN

Continuous Drain Current (ID) :

37A

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Transistor Application :

SWITCHING

Power Dissipation-Max :

57W Tc

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Power Dissipation :

4.8W

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

40A

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

3420pF @ 15V

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

Number of Terminations :

5

Series :

TrenchFET® Gen IV