SISS52DN-T1-GE3
- Mfr.Part #
- SISS52DN-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK? 1212-8SH
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 47.1A/162A PPAK
- Stock
- 23,102
- In Stock :
- 23,102
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package :
- Digi-Reel?
- FET Feature :
- -
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Current - Continuous Drain (Id) @ 25°C :
- 47.1A (Ta), 162A (Tc)
- Mounting Style :
- SMD/SMT
- Continuous Drain Current Id :
- 162A
- Minimum Operating Temperature :
- - 55 C
- RoHS :
- Details
- Package / Case :
- PowerPAK? 1212-8SH
- MSL :
- MSL 1 - Unlimited
- Brand :
- Vishay / Siliconix
- Transistor Type :
- 1 N - Channel
- Power Dissipation :
- 57W
- Channel Type :
- N
- Drain to Source Voltage (Vdss) :
- 30 V
- Rise Time :
- 6 ns
- Number of Elements per Chip :
- 1
- Product Category :
- MOSFET
- Package Type :
- PowerPAK 1212-8S
- Transistor Polarity :
- N-Channel
- Product Type :
- MOSFET
- Base Product Number :
- SISS52
- Product Status :
- Active
- Gate Charge (Qg) (Max) @ Vgs :
- 65 nC @ 10 V
- Power Dissipation (Max) :
- 4.8W (Ta), 57W (Tc)
- Series :
- TrenchFET? Gen V
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 2950 pF @ 15 V
- Maximum Operating Temperature :
- + 150 C
- Mounting Type :
- Surface Mount
- Qualification :
- -
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- Channel Mode :
- Enhancement
- Supplier Device Package :
- PowerPAK? 1212-8SH
- Vgs (Max) :
- +16V, -12V
- Manufacturer :
- Vishay
- Rds On (Max) @ Id, Vgs :
- 1.2mOhm @ 20A, 10V
- Packaging :
- MouseReel
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- Tradename :
- TrenchFET
- Pin Count :
- 8
- Subcategory :
- MOSFETs
- Number of Channels :
- 1 Channel
- Datasheets
- SISS52DN-T1-GE3
N-Channel MouseReel 1.2mOhm @ 20A, 10V +16V, -12V 2950 pF @ 15 V 65 nC @ 10 V 30 V PowerPAK? 1212-8SH
SISS52DN-T1-GE3 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2950 pF @ 15 V.The transistor must receive a 30 V drain to source voltage (Vdss) in order to function.
SISS52DN-T1-GE3 Features
a 30 V drain to source voltage (Vdss)
SISS52DN-T1-GE3 Applications
There are a lot of Vishay Siliconix
SISS52DN-T1-GE3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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