SISS46DN-T1-GE3

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Mfr.Part #
SISS46DN-T1-GE3
Manufacturer
Vishay
Package / Case
PowerPAK® 1212-8S
Datasheet
Download
Description
MOSFET N-CH 100V 12.5/45.3A PPAK
Stock
208
In Stock :
208

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
-55°C~150°C TJ
Package / Case :
PowerPAK® 1212-8S
Power Dissipation-Max :
5W Ta 65.7W Tc
Drain to Source Voltage (Vdss) :
100V
Input Capacitance (Ciss) (Max) @ Vds :
2140pF @ 50V
Packaging :
Tape and Reel (TR)
Vgs (Max) :
±20V
Supplier Device Package :
PowerPAK® 1212-8S (3.3x3.3)
Rds On (Max) @ Id, Vgs :
12.8mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs :
42nC @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
N-Channel
Mounting Type :
Surface Mount
Series :
TrenchFET® Gen IV
Vgs(th) (Max) @ Id :
3.4V @ 250μA
Drive Voltage (Max Rds On,Min Rds On) :
7.5V 10V
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
14 Weeks
Current - Continuous Drain (Id) @ 25°C :
12.5A Ta 45.3A Tc
Datasheets
SISS46DN-T1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SISS46DN-T1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:PowerPAK® 1212-8S, Mounting Type:Surface Mount, SISS46DN-T1-GE3 pinout, SISS46DN-T1-GE3 datasheet PDF, SISS46DN-T1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SISS46DN-T1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SISS46DN-T1-GE3


N-Channel Tape & Reel (TR) 12.8mOhm @ 10A, 10V ±20V 2140pF @ 50V 42nC @ 10V 100V PowerPAK® 1212-8S

SISS46DN-T1-GE3 Description


The SISS46DN-T1-GE3 is an N-Channel 100 V (D-S) MOSFET. Impact of Metal Oxide and Silicon Field Transistors also referred to as MOSFETs, are electronic components used in circuits to switch or amplify voltages. It has three terminals and is a voltage-controlled device.



SISS46DN-T1-GE3 Features


  • Tuned for the lowest RDS - Qoss FOM

  • 100 % Rg and UIS tested

  • TrenchFET® Gen IV power MOSFET

  • Very low RDS - Qg figure-of-merit (FOM)



SISS46DN-T1-GE3 Applications


  • Solar micro inverter

  • Motor drive switch

  • Battery and load switch

  • Industrial

  • Synchronous rectification

  • Primary side switch

  • DC/DC converter


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