SISS46DN-T1-GE3
- Mfr.Part #
- SISS46DN-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® 1212-8S
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 12.5/45.3A PPAK
- Stock
- 208
- In Stock :
- 208
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- PowerPAK® 1212-8S
- Power Dissipation-Max :
- 5W Ta 65.7W Tc
- Drain to Source Voltage (Vdss) :
- 100V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2140pF @ 50V
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±20V
- Supplier Device Package :
- PowerPAK® 1212-8S (3.3x3.3)
- Rds On (Max) @ Id, Vgs :
- 12.8mOhm @ 10A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 42nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Series :
- TrenchFET® Gen IV
- Vgs(th) (Max) @ Id :
- 3.4V @ 250μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 7.5V 10V
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 14 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 12.5A Ta 45.3A Tc
- Datasheets
- SISS46DN-T1-GE3
N-Channel Tape & Reel (TR) 12.8mOhm @ 10A, 10V ±20V 2140pF @ 50V 42nC @ 10V 100V PowerPAK® 1212-8S
SISS46DN-T1-GE3 Description
The SISS46DN-T1-GE3 is an N-Channel 100 V (D-S) MOSFET. Impact of Metal Oxide and Silicon Field Transistors also referred to as MOSFETs, are electronic components used in circuits to switch or amplify voltages. It has three terminals and is a voltage-controlled device.
SISS46DN-T1-GE3 Features
-
Tuned for the lowest RDS - Qoss FOM
-
100 % Rg and UIS tested
-
TrenchFET® Gen IV power MOSFET
-
Very low RDS - Qg figure-of-merit (FOM)
SISS46DN-T1-GE3 Applications
-
Solar micro inverter
-
Motor drive switch
-
Battery and load switch
-
Industrial
-
Synchronous rectification
-
Primary side switch
-
DC/DC converter
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