SISS32ADN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current Id :

63

Qualification :

-

Product Category :

MOSFET

Packaging :

Cut Tape

Mounting Type :

Surface Mount

Base Product Number :

SISS32

Operating Temperature :

-55°C ~ 150°C (TJ)

Series :

TrenchFET? Gen IV

FET Feature :

-

Channel Type :

N

Number of Elements per Chip :

1

Maximum Operating Temperature :

+ 150 C

Rise Time :

6 ns

Manufacturer :

Vishay

Product Type :

MOSFET

Rds On (Max) @ Id, Vgs :

7.3mOhm @ 10A, 10V

Gate Charge (Qg) (Max) @ Vgs :

36 nC @ 10 V

Subcategory :

MOSFETs

Mounting Style :

SMD/SMT

Power Dissipation :

65.7

Package :

Digi-Reel?

Package / Case :

PowerPAK? 1212-8S

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

80 V

Input Capacitance (Ciss) (Max) @ Vds :

1520 pF @ 40 V

Vgs(th) (Max) @ Id :

3.6V @ 250µA

Number of Channels :

1 Channel

Pin Count :

8

Transistor Polarity :

N-Channel

Supplier Device Package :

PowerPAK? 1212-8S

RoHS :

Details

Brand :

Vishay / Siliconix

Current - Continuous Drain (Id) @ 25°C :

17.4A (Ta), 63A (Tc)

Product Status :

Active

Channel Mode :

Enhancement

Transistor Type :

1 N-Channel

Power Dissipation (Max) :

5W (Ta), 65.7W (Tc)

FET Type :

N-Channel

Minimum Operating Temperature :

- 55 C

Configuration :

Single

Package Type :

PowerPAK 1212-8S

Drive Voltage (Max Rds On, Min Rds On) :

7.5V, 10V