SIS176LDN-T1-GE3
- Mfr.Part #
- SIS176LDN-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK? 1212-8
- Datasheet
- Download
- Description
- N-CHANNEL 70 V (D-S) MOSFET POWE
- Stock
- 7,437
- In Stock :
- 7,437
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements per Chip :
- 1
- Transistor Type :
- 1 N-Channel
- Product Status :
- Active
- MSL :
- MSL 1 - Unlimited
- Mounting Style :
- SMD/SMT
- Packaging :
- MouseReel
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Power Dissipation (Max) :
- 3.6W (Ta), 39W (Tc)
- Subcategory :
- MOSFETs
- Drain to Source Voltage (Vdss) :
- 70 V
- Number of Channels :
- 1 Channel
- Continuous Drain Current Id :
- 42.3
- Minimum Operating Temperature :
- - 55 C
- Gate Charge (Qg) (Max) @ Vgs :
- 19 nC @ 4.5 V
- Power Dissipation :
- 39
- Product Type :
- MOSFET
- FET Type :
- N-Channel
- Product Category :
- MOSFET
- Series :
- TrenchFET? Gen IV
- Pin Count :
- 8
- Vgs (Max) :
- ±12V
- Package / Case :
- PowerPAK? 1212-8
- Current - Continuous Drain (Id) @ 25°C :
- 12.9A (Ta), 42.3A (Tc)
- Supplier Device Package :
- PowerPAK? 1212-8
- Drive Voltage (Max Rds On, Min Rds On) :
- 3.3V, 4.5V
- Maximum Operating Temperature :
- + 150 C
- Transistor Polarity :
- N-Channel
- Mounting Type :
- Surface Mount
- Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 1.6V @ 250μA
- Package :
- Digi-Reel?
- Manufacturer :
- Vishay
- Rise Time :
- 6 ns
- Channel Type :
- N Channel
- FET Feature :
- -
- Brand :
- Vishay / Siliconix
- Tradename :
- TrenchFET
- RoHS :
- Details
- Qualification :
- -
- Package Type :
- PowerPAK 1212-8
- Channel Mode :
- Enhancement
- Input Capacitance (Ciss) (Max) @ Vds :
- 1660 pF @ 35 V
- Rds On (Max) @ Id, Vgs :
- 10.9mOhm @ 10A, 4.5V
- Datasheets
- SIS176LDN-T1-GE3
N-Channel MouseReel 10.9mOhm @ 10A, 4.5V ±12V 1660 pF @ 35 V 19 nC @ 4.5 V 70 V PowerPAK? 1212-8
SIS176LDN-T1-GE3 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1660 pF @ 35 V.In order to operate this transistor, a voltage of 70 V is needed from the drain to the source (Vdss).
SIS176LDN-T1-GE3 Features
a 70 V drain to source voltage (Vdss)
SIS176LDN-T1-GE3 Applications
There are a lot of Vishay Siliconix
SIS176LDN-T1-GE3 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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