SIS106DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

18.5mOhm @ 4A, 10V

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

9.8A Ta 16A Tc

Input Capacitance (Ciss) (Max) @ Vds :

540pF @ 30V

Power Dissipation-Max :

3.2W Ta 24W Tc

Drive Voltage (Max Rds On,Min Rds On) :

7.5V 10V

Supplier Device Package :

PowerPAK® 1212-8S (3.3x3.3)

Series :

TrenchFET® Gen IV

Package / Case :

PowerPAK® 1212-8S

Factory Lead Time :

14 Weeks

Drain to Source Voltage (Vdss) :

60V

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

13.5nC @ 10V

RoHS Status :

ROHS3 Compliant