SIS108DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

14 Weeks

Series :

TrenchFET® Gen IV

Input Capacitance (Ciss) (Max) @ Vds :

545pF @ 40V

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

6.7A Ta 16A Tc

Drive Voltage (Max Rds On,Min Rds On) :

7.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Drain to Source Voltage (Vdss) :

80V

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

34mOhm @ 4A, 10V

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Supplier Device Package :

PowerPAK® 1212-8

Package / Case :

PowerPAK® 1212-8

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

3.2W Ta 24W Tc

Mounting Type :

Surface Mount