SIRA66DP-T1-GE3
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- Mfr.Part #
- SIRA66DP-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 50A PPAK SO-8
- Stock
- 75,494
- In Stock ：
- 75,494
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Resistance :
- 1.9mOhm
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Reach Compliance Code :
- Unknown
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- PowerPAK® SO-8
- ECCN Code :
- EAR99
- Factory Lead Time :
- 14 Weeks
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 66nC @ 10V
- Number of Pins :
- 8
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Published :
- 2014
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 2.2V @ 1mA
- Drain to Source Voltage (Vdss) :
- 30V
- Vgs (Max) :
- +20V, -16V
- Rds On (Max) @ Id, Vgs :
- 2.3m Ω @ 15A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 62.5W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- SIRA66DP-T1-GE3
N-Channel Tape & Reel (TR) 2.3m Ω @ 15A, 10V +20V, -16V 66nC @ 10V 30V PowerPAK® SO-8
SIRA66DP-T1-GE3 Overview
For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
SIRA66DP-T1-GE3 Features
a 30V drain to source voltage (Vdss)
SIRA66DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SIRA66DP-T1-GE3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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