SIRA00DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

Unknown

Mounting Type :

Surface Mount

Number of Elements :

1

Width :

5mm

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Height :

1.07mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

1m Ω @ 20A, 10V

Published :

2012

Radiation Hardening :

No

Package / Case :

PowerPAK® SO-8

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V

Terminal Form :

C BEND

Drain to Source Breakdown Voltage :

30V

Element Configuration :

Single

Series :

TrenchFET®

Number of Pins :

8

Threshold Voltage :

1.1V

Length :

5.99mm

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Fall Time (Typ) :

11 ns

Turn-Off Delay Time :

67 ns

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

+20V, -16V

Rise Time :

14ns

Power Dissipation-Max :

6.25W Ta 104W Tc

Contact Plating :

Tin

FET Type :

N-Channel

Terminal Position :

Dual

Continuous Drain Current (ID) :

60A

Resistance :

4mOhm

Turn On Delay Time :

18 ns

JESD-30 Code :

R-PDSO-C5

Number of Terminations :

5

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Number of Channels :

1

Pulsed Drain Current-Max (IDM) :

400A

Factory Lead Time :

14 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

11700pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

506.605978mg

Power Dissipation :

6.25W

Nominal Vgs :

1.1 V

Case Connection :

DRAIN