SIRA06DP-T1-GE3
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- Mfr.Part #
- SIRA06DP-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 40A PPAK SO-8
- Stock
- 102,806
- In Stock ：
- 102,806
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Resistance :
- 2.5MOhm
- Published :
- 2011
- Gate Charge (Qg) (Max) @ Vgs :
- 77nC @ 10V
- Number of Channels :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Length :
- 6.25mm
- FET Type :
- N-Channel
- Height :
- 1.12mm
- Drain to Source Breakdown Voltage :
- 30V
- Mounting Type :
- Surface Mount
- Weight :
- 506.605978mg
- Power Dissipation-Max :
- 5W Ta 62.5W Tc
- Series :
- TrenchFET®
- ECCN Code :
- EAR99
- Threshold Voltage :
- 1.1V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Power Dissipation :
- 5W
- Continuous Drain Current (ID) :
- 40A
- Input Capacitance (Ciss) (Max) @ Vds :
- 3595pF @ 15V
- Peak Reflow Temperature (Cel) :
- 260
- Gate to Source Voltage (Vgs) :
- 20V
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 2.5m Ω @ 15A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Width :
- 5.26mm
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- +20V, -16V
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- Turn-Off Delay Time :
- 30 ns
- Number of Pins :
- 8
- Package / Case :
- PowerPAK® SO-8
- Contact Plating :
- Tin
- Fall Time (Typ) :
- 20 ns
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- REACH SVHC :
- Unknown
- Factory Lead Time :
- 14 Weeks
- Turn On Delay Time :
- 24 ns
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Datasheets
- SIRA06DP-T1-GE3
N-Channel Tape & Reel (TR) 2.5m Ω @ 15A, 10V +20V, -16V 3595pF @ 15V 77nC @ 10V PowerPAK® SO-8
SIRA06DP-T1-GE3 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3595pF @ 15V.This device has a continuous drain current (ID) of [40A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 30 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 24 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 1.1V.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
SIRA06DP-T1-GE3 Features
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 30 ns
a threshold voltage of 1.1V
SIRA06DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SIRA06DP-T1-GE3 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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