SIHS90N65E-E3

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Mfr.Part #
SIHS90N65E-E3
Manufacturer
Vishay
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 650V 87A SUPER247
Stock
2,480
In Stock :
2,480

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
4V @ 250µA
Operating Temperature :
-55°C~150°C TJ
Package / Case :
TO-247-3
Mounting Type :
Through Hole
Power Dissipation-Max :
625W Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Voltage (Vdss) :
650V
Input Capacitance (Ciss) (Max) @ Vds :
11826pF @ 100V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Type :
N-Channel
Mount :
Through Hole
Factory Lead Time :
14 Weeks
Gate Charge (Qg) (Max) @ Vgs :
591nC @ 10V
Published :
2016
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
ECCN Code :
EAR99
Vgs (Max) :
±30V
Continuous Drain Current (ID) :
87A
Rds On (Max) @ Id, Vgs :
29m Ω @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C :
87A Tc
Packaging :
Tape and Reel (TR)
RoHS Status :
ROHS3 Compliant
Datasheets
SIHS90N65E-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SIHS90N65E-E3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, Mounting Type:Through Hole, SIHS90N65E-E3 pinout, SIHS90N65E-E3 datasheet PDF, SIHS90N65E-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SIHS90N65E-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SIHS90N65E-E3


N-Channel Tape & Reel (TR) 29m Ω @ 45A, 10V ±30V 11826pF @ 100V 591nC @ 10V 650V TO-247-3

SIHS90N65E-E3 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 11826pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 87A. Operating this transistor requires a 650V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

SIHS90N65E-E3 Features


a continuous drain current (ID) of 87A
a 650V drain to source voltage (Vdss)


SIHS90N65E-E3 Applications


There are a lot of Vishay Siliconix
SIHS90N65E-E3 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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