SIHS20N50C-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Number of Terminations :

3

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Vgs (Max) :

±30V

DS Breakdown Voltage-Min :

500V

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

80A

Rds On (Max) @ Id, Vgs :

270m Ω @ 10A, 10V

Fall Time (Typ) :

44 ns

Input Capacitance (Ciss) (Max) @ Vds :

2942pF @ 25V

Published :

2016

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Power Dissipation-Max :

250mW Tc

JEDEC-95 Code :

TO-247AC

Turn On Delay Time :

80 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

500V

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Radiation Hardening :

No

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.27Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Package / Case :

TO-274AA

Pin Count :

3

Turn-Off Delay Time :

32 ns

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

76nC @ 10V

Factory Lead Time :

8 Weeks

Rise Time :

27ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

20A