SIHS36N50D-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

446W Tc

Input Capacitance (Ciss) (Max) @ Vds :

3233pF @ 100V

FET Type :

N-Channel

Factory Lead Time :

8 Weeks

Weight :

38.000013g

Turn-Off Delay Time :

79 ns

Number of Elements :

1

Packaging :

Tube

JESD-30 Code :

R-PSIP-T3

Continuous Drain Current (ID) :

36A

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

36A Tc

Rds On (Max) @ Id, Vgs :

130m Ω @ 18A, 10V

Package / Case :

TO-247-3

Published :

2012

Threshold Voltage :

3V

Drain to Source Voltage (Vdss) :

500V

Number of Channels :

1

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Power Dissipation :

446W

Length :

16.1mm

Vgs(th) (Max) @ Id :

5V @ 250μA

Mount :

Through Hole

Height :

20.8mm

Turn On Delay Time :

33 ns

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

Unknown

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

DS Breakdown Voltage-Min :

500V

Width :

5.3mm

Number of Pins :

247

Gate to Source Voltage (Vgs) :

30V

Rise Time :

89ns

Fall Time (Typ) :

68 ns

JEDEC-95 Code :

TO-274AA

Gate Charge (Qg) (Max) @ Vgs :

125nC @ 10V

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

332 mJ